Auger Recombination in GaAs from First Principles

Auger Recombination in GaAs from First Principles

Auger recombination is a significant loss mechanism in many optoelectronic devices. We use first-principles methods based on density functional theory to study the relative importance of direct and indirect phonon-assisted Auger recombination in GaAs and related alloys. Energy and momentum of the recombining electron−hole pair can be transferred to an Auger electron (eeh process) or an Auger ho...

Auger recombination in sodium-iodide scintillators from first principles

Auger recombination suppression and band alignment in GaAsBi/GaAs heterostructures

Using a combination of experimental and theoretical techniques we present the dependence of the bandgap Eg and the spin orbit splitting energy so, with Bi concentration in GaAsBi/GaAs samples. We find that the concentration at which so,> Eg occurs at 9%. Both spectroscopic as well as first device results indicate a type I alignment.

Accurate first-principles detailed-balance determination of auger recombination and impact ionization rates in semiconductors.

The technologically important prediction of Auger recombination lifetimes in semiconductors is addressed by means of a fully first-principles formalism, based on precise energy bands and wave functions provided by the full-potential linearized augmented plane wave code. The minority carrier Auger lifetime is determined by two related approaches: (i) a direct evaluation within Fermi's golden rul...

Model for nucleation in GaAs homoepitaxy derived from first principles

The initial steps of molecular beam epitaxy growth of GaAs on b2-reconstructed GaAs~001! are investigated by performing total energy and electronic structure calculations using density functional theory and a repeated slab model of the surface. We study the interaction and clustering of adsorbed Ga atoms and the adsorption of As2 molecules onto Ga atom clusters adsorbed on the surface. The stab...